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首页> 外文期刊>Journal of the European Ceramic Society >Synthesis of carbon-rich hafnia thin films by pulsed laser deposition
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Synthesis of carbon-rich hafnia thin films by pulsed laser deposition

机译:脉冲激光沉积合成富碳氧化f薄膜

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摘要

Carbon-rich ceramics are an emerging class of materials with attractive high-temperature properties, including resistance to crystallization, densemicrostructure, and low porosity. We explored direct synthesis of carbon-rich hafnia, which is known to form as a compact interlayer in the oxidescales of oxidized hafnium carbide. The material was synthesized by pulsed laser deposition, using pure Hf02 targets in C_2H_2 background gas atlow pressures. Stable films up to 700 nm thick and with high molar fractions (~0.1-0.45) of carbon were obtained. The predominant chemicalbonding of Hf and 0 atoms is that of oxygen-deficient HfO_2 , while carbon is present in elemental or hydrogenated forms. Annealing at 600 leadsto loss of most of the hydrogen from the films, which is accompanied by enhanced sp~2 bonding of carbon. The films have amorphous, compact, and finely grained microstructure. Carbon molar fractions higher than ~0.2 inhibit microcrystallinity to at least 600℃.
机译:富碳陶瓷是一类新兴的材料,具有吸引人的高温特性,包括抗结晶性,致密的微观结构和低孔隙率。我们探索了富含碳的氧化f的直接合成方法,该方法已知在氧化的氧化f的氧化物中形成紧密的中间层。该材料是通过在C_2H_2背景气体中在低压下使用纯HfO2靶材,通过脉冲激光沉积法合成的。获得了厚度高达700 nm且碳的摩尔分数高(约0.1-0.45)的稳定膜。 Hf和0原子的主要化学键是缺氧的HfO_2,而碳以元素或氢化形式存在。在600℃退火会导致薄膜中的大部分氢流失,并伴有碳的sp〜2键增强。薄膜具有无定形,致密和细颗粒的微观结构。碳摩尔分数高于〜0.2时,至少在600℃时会抑制微晶化。

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