A Ku-band high power density A1GaN/GaN HEMT monolithic power amplifier

摘要

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3 μm AIGaN/GaN HEMT production process on a 2-inch diameter semi-insulating (SI) 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range, the single chip amplifier demonstrates a maximum power of 38 dBm (6.3 W), a peak power added efficiency (PAE) of 24.2% and linear gain of 6.4 to 7.5 dB under a 10% duty pulse condition when operated at V_(ds) = 25 V and V_(gs) = –4 V. At these power levels, the amplifier exhibits a power density in excess of 5 W/mm.