THREE-STAGE GAN(GALLIUM NITRIDE) HEMT(HIGH ELECTRON MOBILITY TRANSISTOR) DOHERTY POWER AMPLIFIER FOR HIGH FREQUENCY APPLICATNS CAPABLE OF BEING OPERATED IN A HIGH FREQUENCY MORE THAN 3GHZ

摘要

PURPOSE: A three-stage GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) Doherty power amplifier for high frequency applications is provided to be operated in a high frequency more than 3ghz by using a GaN HEMT power device.;CONSTITUTION: A 3-stage Doherty power amplifier includes a 10-dB power divider(301), a drive amplifier(302), and a gate bias controller(303). The 3-stage Doherty power amplifier includes a first λ/4 transmission line(304), a delay line(305), and a hybrid 3-dB power divider(306). The 3-stage Doherty power amplifier includes an input matching circuit(307), a carrier amplifier(308), and a first peaking amplifier(309). The 3-stage Doherty power amplifier includes a second peaking amplifier(310), an output matching circuit(311), and an output λ/4 transmission line(312).;COPYRIGHT KIPO 2012