Design of GaN/A1GaN HEMT Class-E Power Amplifier Considering Trapping and Thermal Effects.

摘要

A microwave class-E power amplifier using AlGaN/GaN HEMT as the switching device is reported by incorporating trapping and thermal effects in the large-signal device model. The load network of the class-E amplifier is designed by considering more realistic exponential decay of the drain current during fall time and finite quality factor of the resonant circuit to incorporate the nonidealities of the active device and passive components. With 9V supply voltage, calculated output power and power conversion efficiency are 89mW and 58% at 1GHz which decrease to 84mW and 54% at 3.8GHz, respectively for a GaN/Al(sub 0.30)Ga(sub 0.70)N HEMT with gate width of 50micrometers.