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首页> 外文期刊>Journal of Semiconductors >Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect
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Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect

机译:部分耗尽的SOI-CMOS中的体接触自偏压效应以及抑制浮体效应的替代方法

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摘要

As SOI-CMOS technology nodes reach the tens of nanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.
机译:随着SOI-CMOS技术节点达到数十纳米状态,体接触变得越来越无法抑制浮体效应。在本文中,针对不同结构和条件深入分析和讨论了导致这种故障的自偏压效应。还介绍和讨论了抑制浮体效应的其他替代方法。

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