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The Need of Top Anti-reflective Coating Materials for ArF Immersion Lithography

机译:ArF浸没式光刻技术需要顶级抗反射涂层材料

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Recently,a new technology called ArF immersion lithography is emerging as a next generation lithography.The first problem of this technology is contamination issues that come from the dissolution of contaminants from the photoresist to the immersion liquid.The second is optical problem that comes from the using hyper NA system.To solve these two problems,we have developed top antireflective coating(TARC)material.This TARC material can be coated on resist without damage to the resist property.In addition to,this TARC material is easily developable by conventional 2.38 wt% TMAH solution.The reflective index of this TARC is adjusted to 1.55,so it can act as an antireflective material.To this TARC material for immersion,quencher gradient resist process(QGRP)was applied also.As a result,we could improve resolution and process margin.However,some of resists showed defects that were generated by this TARC material and QGRP.To solve this defect problem,we introduced buffer function to the TARC material.Thanks to this buffer function,we could minimize defects of resist pattern in immersion lithography.
机译:最近,一种称为ArF浸没式光刻技术的新技术正在作为下一代光刻技术出现。该技术的第一个问题是污染问题,这些污染问题是由于污染物从光致抗蚀剂溶解到浸没液体中而引起的;第二是光学问题,它来自于光刻胶。为了解决这两个问题,我们开发了顶级抗反射涂层(TARC)材料。该TARC材料可以涂覆在抗蚀剂上而不会损害抗蚀剂性能。此外,该TARC材料还可以通过常规2.38轻松开发。重量百分比为TMAH溶液。该TARC的反射率调整为1.55,因此可以用作抗反射材料。该TARC浸渍材料也采用了淬火梯度抗蚀剂工艺(QGRP)。分辨率和工艺裕量。但是,某些抗蚀剂显示出这种TARC材料和QGRP产生的缺陷。为解决此缺陷问题,我们在TARC中引入了缓冲功能借助这种缓冲功能,我们可以最大程度地减少浸没式光刻中抗蚀剂图案的缺陷。

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