首页> 外国专利> Polymer and a production method, as well as the composition of the top anti-reflective coating comprising the same of; (TARC Top Anti-Reflective Coating) top anti-reflective coating

Polymer and a production method, as well as the composition of the top anti-reflective coating comprising the same of; (TARC Top Anti-Reflective Coating) top anti-reflective coating

机译:聚合物及其生产方法,以及包括其的顶部抗反射涂层的组成; (TARC顶部抗反射涂层)顶部抗反射涂层

摘要

Disclosed herein are top anti-reflective coating polymers used in a photolithography process, methods for preparing the anti-reflective coating polymer, and anti-reflective coating compositions comprising the disclosed anti-reflective coating polymers. The top anti-reflective coating polymers are used in immersion lithography for the fabrication of a sub-50 nm semiconductor device. The top anti-reflective coating polymer is represented by Formula 1 below: wherein R1, R2 and R3 are independently hydrogen or a methyl group; and a, b and c represent the mole fraction of each monomer, and are independently in the range between about 0.05 and about 0.9. Because the disclosed top anti-reflective coatings are not soluble in water, they can be used in immersion lithography using water as a medium for the light source. In addition, since the top anti-reflective coatings can reduce the reflectance from an underlayer, the uniformity of CD is improved, thus enabling the formation of ultrafine patterns.
机译:本文公开了在光刻工艺中使用的顶部抗反射涂料聚合物,用于制备抗反射涂料聚合物的方法以及包含所公开的抗反射涂料聚合物的抗反射涂料组合物。顶部抗反射涂层聚合物在浸没式光刻中用于制造低于50 nm的半导体器件。顶部抗反射涂层聚合物由下式1表示:其中R 1,R 2和R 3独立地是氢或甲基; a,b和c代表每种单体的摩尔分数,并且独立地在约0.05至约0.9之间的范围内。因为所公开的顶部抗反射涂层不溶于水,所以它们可以用于使用水作为光源的浸没式光刻中。另外,由于顶部抗反射涂层可以降低来自底层的反射率,所以改善了CD的均匀性,从而使得能够形成超细图案。

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