The influence of H_2/Ar flow ratio on the structure and optoelectronic properties of ZnO:Al films deposited on glass and polymer substrates

摘要

Aluminium doped ZnO (ZnO: Al) films were deposited on glass and polymer substrates by RF magnetron sputtering at various mass flow ratio of H _2/Ar. The influence of H_2/Ar ratio on structure and properties of films was investigated by X-ray diffractometery (XRD), X-ray Photoelectron Spectrum(XPS),UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that low H_2 content in the deposition atmosphere is helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. H_2 has a notable effect on the stoichiometry of ZnO:Al films. The O 1s and Zn 2p peak of the films with H_2 dilution shifted towards the small binding energy and larger value respectively. The resistivity of 5.32× 10~(-4)Ωcm and the average transmittance of 91.3% in the visible region was obtained for the film prepared in the 5% H_2/Ar ambient on glass.