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Hydrogen effect on structure and mechanical properties of ZnO films deposited in Ar/H_2 plasma

机译:氢对Ar / H_2等离子体中ZnO薄膜结构和力学性能的影响

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In the present work the mechanical properties of ZnO thin films, deposited on Si (100) substrates, were studied using the nanoindentation technique. ZnO thin films were deposited by radiofrequency sputtering from a ZnO target with different H_2/Ar gas mixtures. During the deposition the plasma species were in-situ monitored using optical emission spectroscopy (OES). The results showed that the introduction of H_2 in the plasma phase had a strong effect on the material's hardness and elastic modulus. The measured elastic modulus values were then related to the material density to estimate the porosity of the ZnO films. We found an increased film porosity when H_2 was added to the sputtering gas, from 6% to 18% in volume. Moreover we found that the porosity was correlated by the emission intensity ratio of atomic Argon on atomic Hydrogen.
机译:在本工作中,使用纳米压痕技术研究了沉积在Si(100)衬底上的ZnO薄膜的机械性能。通过射频溅射从具有不同H_2 / Ar气体混合物的ZnO靶材上沉积ZnO薄膜。在沉积期间,使用光发射光谱法(OES)原位监测等离子体种类。结果表明,在等离子体相中引入H_2对材料的硬度和弹性模量有很大的影响。然后将测得的弹性模量值与材料密度相关联,以估算ZnO膜的孔隙率。我们发现,将H_2添加到溅射气体中时,膜的孔隙率从6%增至18%。此外,我们发现孔隙率与原子氩在原子氢上的发射强度比相关。

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