【24h】

Periodic arrays of organic crystals on polymer gate dielectric for low-voltage field-effect transistors and complementary inverter

机译:聚合物栅电介质上有机晶体的周期性阵列,用于低压场效应晶体管和互补逆变器

获取原文
获取原文并翻译 | 示例
           

摘要

Periodic arrays of highly oriented 7,7,8,8-tetracyanoquinodimethane (TCNQ) crystals, directly grown on a polymeric gate dielectric through a solution process, are used for the fabrication of a low-voltage organic field-effect transistor (OFET). Consequently, an organic complementary inverter using the TCNQ periodic array (n-channel) and pentacene (p-channel) is also reported. The TCNQ-based n-channel OFET exhibited very stable field-effect characteristics with low operational (2 V) and threshold voltages (<0.5 V). The highest field-effect carrier mobility in the saturation region was found to be 0.03 cm~2 V~(-1) s~(-1). Furthermore, the organic complementary inverter showed good response characteristics in the low-voltage regime. The swing range of V_(OUT) is same as V_(DD), ensuring "zero" static power consumption in the digital logic circuit. For the inverter with V_(DD) = 2 V, the noise margin for low and high voltages are 1.0 V and 0.3 V, respectively. The logic threshold (V_(IN) = V_(OUT)) is 1.3 V and the maximum gain (-dV_(OUT)/dV_(IN)) of 4 is obtained at V_(IN) = 1.3 V.
机译:通过溶液工艺直接在聚合物栅极电介质上生长的高度取向的7,7,8,8-四氰基喹二甲烷(TCNQ)晶体的周期性阵列用于制造低压有机场效应晶体管(OFET)。因此,还报道了使用TCNQ周期阵列(n通道)和并五苯(p通道)的有机互补逆变器。基于TCNQ的n通道OFET具有非常稳定的场效应特性,具有较低的工作电压(2 V)和阈值电压(<0.5 V)。发现饱和区中的最高场效应载流子迁移率为0.03 cm〜2 V〜(-1)s〜(-1)。此外,有机互补逆变器在低压状态下表现出良好的响应特性。 V_(OUT)的摆幅范围与V_(DD)相同,从而确保了数字逻辑电路中的“零”静态功耗。对于V_(DD)= 2 V的逆变器,低电压和高电压的噪声容限分别为1.0 V和0.3V。逻辑阈值(V_(IN)= V_(OUT))为1.3 V,最大增益(-dV_(OUT)/ dV_(IN))为4(V_(IN)= 1.3 V)。

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号