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Stability improvement in flexible low-voltage organic field-effect transistors with complementary polymeric dielectrics

机译:具有互补聚合物电介质的柔性低压有机场效应晶体管的稳定性提高

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摘要

The stability in terms of electrical, mechanical and thermal performance, is highly desirable for practical application of flexible electronics. Here, we report the stability improvement for pentacene-based flexible organic filed-effect transistors (OFETs) with complementary polymeric dielectrics, in which the net structured cross-linked poly(4-vinylphenol) (cPVP) layer was sandwiched between two ultrathin poly-(methyl methacrylate) (PMMA) layers. The core-shell-like structured dielectrics showed improved electrical insulating property by tuning the surface morphology and termination of the pinholes, enabling a 4 V-driven flexible OFET device with a high mobility of 0.72 cm(2)/V and excellent bias-stress stability in air. Under the tensile bending strain, the relationship between the parallel/vertical bending directions, dynamic or static bending modes and device performances were quantitatively investigated. Moreover, this flexible OFETs has a thermal operation margin up to at least 90 degrees C. The interfacial compatibility between the top PMMA layer and Pentacene was responsible for the enhanced stability performances. Our approach provides future possibilities of using hybrid polymeric dielectrics for highly stable flexible OFETs.
机译:在电气,机械和热性能方面的稳定性对于柔性电子设备的实际应用是非常需要的。在这里,我们报告了具有互补聚合物电介质的并五苯柔性有机场效应晶体管(OFET)的稳定性提高,其中,网状结构的交联聚(4-乙烯基苯酚)(cPVP)层被夹在两个超薄聚-丙烯酰胺之间。 (甲基丙烯酸甲酯)(PMMA)层。核壳状结构化电介质通过调节表面形态和针孔的端接表现出改善的电绝缘性能,从而使4 V驱动的柔性OFET器件具有0.72 cm(2)/ V的高迁移率和出色的偏置应力空气中的稳定性。在拉伸弯曲应变下,定量研究了平行/垂直弯曲方向,动态或静态弯曲模式与器件性能之间的关系。而且,这种柔性的OFET具有高达至少90摄氏度的热操作裕度。顶部的PMMA层和并五苯之间的界面相容性是增强的稳定性能的原因。我们的方法为将混合聚合物电介质用于高度稳定的柔性OFET提供了未来的可能性。

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