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ORGANIC FIELD-EFFECT TRANSISTORS WITH POLYMERIC GATE DIELECTRIC AND METHOD FOR MAKING SAME

机译:带有高分子门电介质的有机场效应晶体管及其制造方法

摘要

A kind of manufacture organic effect device (such as TFT or SC-FET devices), propose and include the following steps: that there is (one) deposited polymer dielectric soil resistance to be increased to form insulating layer b deposition first layers from gas phase oligomerization object with harmful molecule from solution or from vapor phase, the oligomer layer adjacent to insulating layer completion device. In addition,The organic effect equipment accordingly manufactured is disclosed.
机译:一种制造有机效应器件(例如TFT或SC-FET器件),提出并包括以下步骤:增加一个沉积的聚合物介电土壤电阻以形成绝缘层b从气相沉积第一层从溶液或从气相中有害分子的低聚对象,该低聚物层与绝缘层完成装置相邻。另外,公开了相应制造的有机效果设备。

著录项

  • 公开/公告号KR20090104058A

    专利类型

  • 公开/公告日2009-10-05

    原文格式PDF

  • 申请/专利权人 ETH ZURICH;

    申请/专利号KR20097015420

  • 发明设计人 마티스 토마스;칼프 볼프강;

    申请日2007-12-07

  • 分类号H01L51/05;

  • 国家 KR

  • 入库时间 2022-08-21 19:12:33

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