Effect of Dielectric Behavior of Gate Dielectric Polymers on Memory Characteristics of Organic Field-effect Transistors

摘要

Organic field-effect transistors (OFETs) with functional gate dielectrics have attracted significant attention recently because the electrical characteristics of OFETs are sensitive to the dielectric functionality of gate dielectrics.[1] For example, the application of a ferroelectric material as a gate dielectric enables the operation of OFETs as memory devices.[2] Thus, extensive research is being carried out to develop OFETs with ferroelectric polymers such as poly(vinylidene fluoride/trifluoroethylene) [p(VDF/TrFE)] copolymer, MXD6, and nylon for realizing flexible OFET-based memory devices.[3-5] In addition, we have been focusing on the memory behavior of OFETs fabricated using polypeptide as a gate dielectric.[6-9] Since polypeptides have a great variety of chemical structures and good solubility in organic solvents, polypeptides are compatible to flexible and printed OFET-based memory devices. However, only a few results on the use of a polypeptide as a gate dielectric in OFETs are known. Thus, understanding the effect of the dielectric behavior of polypeptides on the electric characteristics of OFETs is important for further development of OFET-based memory devices.