机译:非易失性有机场效应晶体管存储应用中聚合物栅介质中的电荷转移和俘获特性
Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (CIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETR1), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea;
Convergence Components and Materials Laboratory, Electronics and Telecommunications Research Institute (ETR1), 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Republic of Korea;
Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (CIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea;
organic non-volatile memory; organic field-effect transistors; conjugated molecules; polymer electret;
机译:聚合物栅极驻极体对非易失性有机场效应晶体管存储器的极性影响
机译:基于并五苯场效应晶体管的聚合栅驻极体的有机非易失性存储器
机译:使用多晶硅作为电荷俘获层的有机场效应晶体管浮栅存储器
机译:低压有机场效应晶体管光子存储器,具有溶液加工阻塞介电层和光敏电荷捕获层
机译:电荷陷阱晶体管(CTT):将逻辑晶体管转换为高级高k /金属门CMOS技术的嵌入式非易失性存储器
机译:基于液晶聚合物半导体的有机场效应晶体管在柔性基板上使用SU-8栅极电介质
机译:栅极介电聚合物介电行为对有机场效应晶体管的存储器特性