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首页> 外文期刊>Journal of nanoscience and nanotechnology >Pulse Electroplating of Copper Film: A Study of Process and Microstructure
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Pulse Electroplating of Copper Film: A Study of Process and Microstructure

机译:铜膜的脉冲电镀:工艺和微观结构的研究

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Copper films with high density of twin boundaries are known for high mechanical strength with little tradeoff in electrical conductivity. To achieve such a high density, twin lamellae and spacing will be on the nanoscale. In the current study, 10μm copper films were prepared by pulse electrodeposition with different applied pulse peak current densities and pulse on-times. It was found that the deposits microstructure was dependent on the parameters of pulse plating. Higher energy pulses caused stronger self-annealing effect on grain recrystallization and growth, thus leading to enhanced fiber textures, while lower energy pulses gave rise to more random microstructure in the deposits and rougher surface topography. However in the extremes of pulse currents we applied, the twin densities were not as high as those resulted from the medium or relatively high pulse currents. The highest amount of nanoscale twinning was found to form from a proper degree of self-annealing induced grain structure evolution. The driving force behind the self-annealing is discussed.
机译:具有高孪晶边界密度的铜膜因其高机械强度而几乎没有导电性的折衷而闻名。为了获得如此高的密度,双薄片和间距将在纳米级。在当前的研究中,通过脉冲电沉积以不同的施加脉冲峰值电流密度和脉冲导通时间来制备10μm的铜膜。发现沉积物的微观结构取决于脉冲镀覆的参数。较高的能量脉冲对晶粒的再结晶和生长产生更强的自退火作用,从而导致增强的纤维织构,而较低的能量脉冲导致沉积物中的显微组织更多,表面形貌更粗糙。但是,在我们施加的脉冲电流的极端情况下,孪生密度不如中等或相对较高的脉冲电流所产生的密度高。发现最大程度的纳米孪晶是由适当程度的自退火诱导的晶粒结构演变形成的。讨论了自退火背后的驱动力。

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