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Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods

机译:InN纳米棒的无催化剂金属有机化学气相沉积生长

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摘要

We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al_2O_3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710℃, complete InN nanorods with typical diameters of 150 nm and length of ~3.5 μm were grown with hexagonal facets. θ-2θ X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al_2O_3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along <0001> with (10-10) facets.
机译:我们证明了使用金属有机化学气相沉积技术在(0001)Al_2O_3衬底上成功生长了无催化剂的InN纳米棒。生长温度显着影响形态演变。在710℃下,生长出完整的InN纳米棒,其典型直径为150 nm,长度为〜3.5μm,具有六边形小平面。 θ-2θX射线衍射测量表明,在(0001)Al_2O_3衬底上生长的(0002)InN纳米棒沿c轴垂直排列。另外,高分辨率透射电子显微镜表明(0001)晶面的间距为0.28nm,这非常接近于体InN的间距。电子衍射图还显示,InN纳米棒是单晶的,具有沿着<0001>的生长方向,具有(10-10)个小平面。

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