On the relation between the interface reaction and annealing method of lead-zirconate-titanate thin film on Pt/Ti/Si substrate

摘要

Lead zirconate titanate (PZT) is a well-known ferroelectric material with a perovskite structure. It is widely utilized for solid-state devices. PZT thin films have great possibilities for integrated device application. Recently the application of PZT thin films for non-volatile random access memory capacitors, due to their large remanent polarization, and for dynamic random access memory capacitors, due to their high dielectric constant, have attracted much attention [1].