Growth Mechanism of Multi-Layer Graphene at Low-Temperature by Plasma Enhanced Chemical Vapor Deposition

摘要

Multi-layer graphene is considered to be a potential replacement of copper wiring for LSI (large-scale integration). PECVD (plasma enhanced chemical vapor deposition) is one of the most reliable synthesis techniques to manufacture high-quality, large-scale graphene at low temperature. Compared with thermal CVD graphene, the relatively lower quality of PECVD graphene is its main drawback. In order to suggest a solution for this problem, we studied the growth mechanism of multi-layer graphene deposited onto nickel by PECVD at 400 degrees C. We found that both segregation and solution-precipitation models affect the growth behavior of multi-layer graphene. To support this, we analyzed the influences of Ni-film thickness, cooling rate, and plasma energy on multi-layer graphene growth. The results from this study would be useful for optimizing graphene growth conditions for many applications.