SINGLE-STEP DIRECT GROWTH OF LARGE-AREA GRAPHENE AND GRAPHENE-BASED NANOSTRUCTURES ON SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

摘要

A method of growing a plurality of graphene sheets includes providing a substrate comprising silicon, placing the substrate in a growth chamber, and flowing a gaseous carbon containing precursor and a carrier gas into the growth chamber. A partial pressure ratio of the gaseous carbon containing precursor to the carrier gas is less than 5.5. The method also includes generating a CMOS compatible microwave plasma in the growth chamber. The CMOS compatible microwave plasma is characterized by a power density between 60 W/cm³ and 80 W/cm³. The method further includes subjecting the substrate to the microwave plasma and growing the plurality of graphene sheets to fully cover the substrate.