Two Dimensional Analytical Subthreshold Model of Nanoscale Cylindrical Surrounding Gate MOSFET Including Impact of Localised Charges

摘要

The paper presents a two dimensional analytical subthreshold model of Nanoscale Cylindrical Surrounding Gate (SRG) MOSFET with localised/fixed interface charges. The model is used to study the effect of localised charges induced at the semiconductor/oxide interface due to the hot carrier induced damage, stress induced damage or radiation induced damage on the electrical performance of the device. The device reliability issues of Nanoscale Cylindrical SRG MOSFETs under localised interface charges are also studied and effects of extension, position, density and polarity of interface localised charges are discussed in detail in terms of change in potential, threshold voltage shift, drain current degradation.