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机译:基于局部电荷的数值分析对基于CMOS反相器的纳米圆柱围栅MOSFET静态和动态性能的影响
Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi I 10 021, India;
Department of Electronics, Deen Dayal Upadhyaya college, University of Delhi, Karampura, New Delhi 110 015, India;
Department of Electronics and communication Engineering, Maharaja Agrasen Institute of Technology, Sector 22, Rohini, Delhi 110 086, India;
Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi I 10 021, India;
机译:局部电荷对纳米级圆柱形环绕栅MOSFET的影响:模拟性能和线性分析
机译:包含局部电荷影响的纳米级圆柱形环绕栅MOSFET的二维分析亚阈值模型
机译:内部电荷控制栅极对圆柱形环绕栅极MOSFET的影响,以改善静电完整性和RF性能
机译:用于存储单元应用的圆柱形环绕浮栅MOSFET(S-FGMOSFET)的基于电荷的紧凑模型
机译:对绝缘体上硅CMOS器件和电路(包括双栅MOSFET)的基于过程的紧凑建模和分析。
机译:使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中:对性能和可靠性的影响
机译:MOSFET在CMOS逆变器静态特性中的冲击跨导参数和阈值电压
机译:无意离散电荷对薄体双栅极mOsFET的标称无效通道的影响:经典到全量子模拟