THREE-DIMENSIONAL MEMORY DEVICE INCLUDING PARTIALLY SURROUNDING SELECT GATES AND FRINGE FIELD ASSISTED PROGRAMMING THEREOF

摘要

A method of operating a three-dimensional memory device includes applying a target string bias voltage to a selected drain select gate electrode which partially surrounds a row of memory stack structures that directly contact a drain select isolation structure, and applying a neighboring string bias voltage that has a greater magnitude than the target string bias voltage to an unselected drain select gate electrode that contacts the drain select level isolation structure.