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Hardness, intrinsic stress, and structure of the a-C and a-C:H films prepared by magnetron sputtering

机译:磁控溅射制备的a-C和a-C:H膜的硬度,固有应力和结构

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The 1.5-μm thick carbon films prepared by magnetron sputtering of a carbon target in Ar, Ar + CH_4 and Ar + O_2 gas mixtures show that the higher their intrinsic stress, the higher their microhardness and the lower their resistivity. The a-C films obtained without ion bombardment (unbiased; the mean free path of sputtered C atoms larger or equal to the cathode-anode distance) show microhardness up to 25 GPa. The biased a-C films (i.e. with ion bombardment) achieve the highest microhardness (up to 50 Gpa) and the lowest resistivity (0.01 Ω cm). An increase in Ar pressure, or the optional addition of O_2, results in a decrease in the microhardness and intrinsic stress and an increase in the film resistivity. In comparison to a-C films, by adding CH_4 to Ar up to certain limit, the microhardness and intrinsic stress of these a-C:H films increase and subsequently decrease steeply. It was specified by analysis of the electron diffraction patterns of thin films (30-60 nm) deposited under the same conditions that the radius of the first co-ordination sphere of C atoms for all the films is in a good agreement with the value for graphite. The prime interplanar distance for biased a-C films is considerably lower than that for unbiased ones and for graphite. Our data indicate the sp~2-bonded carbon structure of the deposited hard carbon films, in which the prime interplanar distance is reduced due to intrinsic stress. Thus, it is more suitable to explain the hardness origin as a consequence of the film nanostructure rather than the presence of sp~3 bonds.
机译:在Ar,Ar + CH_4和Ar + O_2混合气体中通过磁控溅射碳靶形成的1.5μm厚碳膜表明,其固有应力越高,其显微硬度越高,电阻率越低。在没有离子轰击的情况下获得的a-C膜(无偏;溅射的C原子的平均自由程大于或等于阴极-阳极距离)显示出高达25 GPa的显微硬度。偏置的a-C膜(即离子轰击)实现了最高的显微硬度(高达50 Gpa)和最低的电阻率(0.01Ωcm)。 Ar压力的增加,或可选地添加O_2,会导致显微硬度和固有应力的降低以及膜电阻率的提高。与a-C膜相比,通过将CH_4添加到Ar中达到一定极限,这些a-C:H膜的显微硬度和固有应力会增加,然后急剧下降。通过分析在相同条件下沉积的薄膜(30-60 nm)的电子衍射图可以确定,所有薄膜的C原子第一配位球的半径与C的值完全吻合。石墨。偏置的a-C膜的主要平面间距比未偏置的和石墨的要低得多。我们的数据表明沉积的硬碳膜的sp〜2键合碳结构,其中由于固有应力,主界面间距减小了。因此,比起sp〜3键的存在,更适合解释硬度的起因是薄膜纳米结构的结果。

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