Physicochemical aspects of quantum dot array formation in the InAs/GaAs system by droplet epitaxy under MOVPE conditions

摘要

Conditions of the deposition of indium droplets on GaAs(100) substrates during low-temperature (100°C) decomposition of trimethylindium have been studied. It is established that, in order to eliminate the partial coalescence of the indium droplets, it is possible to use subsequent heat treatment for evaporating excess indium. The heat treatment at a temperature of 350-500°C, only slightly modifies the composition of indium drops as a result of the substrate solution and, hence, does not significantly change the composition of quantum dots grown in this system.