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Level-shifter free design of low power dual supply voltage CMOS circuits using dual threshold voltages

机译:使用双阈值电压的低功率双电源电压CMOS电路的无电平转换器设计

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Usage of dual supply voltages in a digital circuit is an effective way of reducing the dynamic power consumption due to the quadratic relation of supply voltage to dynamic power consumption. But the need for level shifters when a low voltage gate drives a high voltage gate has been a limiting factor preventing widespread usage of dual supply voltages in digital circuit design. The overhead of level shifters forces designers to increase the granularity of dual voltage assignment, reducing the maximum obtainable savings. We propose a method of incorporating voltage level conversion into regular CMOS gates by using a second threshold voltage. Proposed level shifter design makes it possible to apply dual supply voltages at gate level granularity with much less overhead compared to traditional level shifters. We modify the threshold voltage of the high voltage gates that are driven by low voltage gates in order to obtain the level shifting operation together with the logic operation. Using our method, we obtained an average of 20% energy savings for ISCAS'85 benchmark circuits designed using 180-nm technology and 17% when 70-nm technology is used.
机译:由于电源电压与动态功耗的二次关系,数字电路中双电源电压的使用是降低动态功耗的有效方法。但是,当低压栅极驱动高压栅极时,对电平转换器的需求已成为限制因素,无法在数字电路设计中广泛使用双电源电压。电平转换器的开销迫使设计人员增加双电压分配的粒度,从而减少了最大的节省量。我们提出了一种通过使用第二阈值电压将电压电平转换合并到常规CMOS栅极中的方法。与传统的电平转换器相比,拟议的电平转换器设计使得可以以栅极电平粒度施加双电源电压,而开销却少得多。我们修改了由低压栅极驱动的高压栅极的阈值电压,以便与逻辑运算一起获得电平转换操作。使用我们的方法,使用180纳米技术设计的ISCAS'85基准电路平均可节能20%,而使用70纳米技术则可平均节能17%。

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