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Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits

机译:低压低功耗CMOS集成电路的阈值电压补偿电路

摘要

A compensation circuit for transistor threshold voltages in integrated circuits is described. The compensation circuit includes a transistor, current source, and gate reference voltage supply. The transistor is biased to provide a well bias voltage, or backgate voltage VBG, which is coupled to transistors provided on a common integrated circuit. This compensation circuit eliminates the need for gate biasing capacitors, and provides flexibility in setting threshold voltages in low voltage circuits. The gate reference voltage and current source are established to provide a desired backgate voltage VBG. Compensation circuits are described for both n-channel and p-channel transistors. A memory device is described which includes compensation circuits for controlling threshold voltages of transistors provided therein.
机译:描述了用于集成电路中的晶体管阈值电压的补偿电路。补偿电路包括晶体管,电流源和栅极参考电压源。晶体管被偏置以提供阱偏置电压或背栅电压V BG ,其被耦合到设置在公共集成电路上的晶体管。该补偿电路消除了对栅极偏置电容器的需求,并为设置低压电路中的阈值电压提供了灵活性。建立栅极参考电压和电流源以提供所需的背栅电压V BG 。描述了用于n沟道和p沟道晶体管的补偿电路。描述了一种存储装置,其包括用于控制设置在其中的晶体管的阈值电压的补偿电路。

著录项

  • 公开/公告号US6556068B2

    专利类型

  • 公开/公告日2003-04-29

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US20010940333

  • 发明设计人 KIE Y. AHN;LEONARD FORBES;

    申请日2001-08-27

  • 分类号G05F30/20;

  • 国家 US

  • 入库时间 2022-08-22 00:04:58

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