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Design of Low-Voltage and Low-Distortion CMOS RF Integrated Circuits Using Volterra Analysis.

机译:利用Volterra分析设计低压低失真CMOS RF集成电路。

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摘要

Analog circuits that operate with low voltage supply headroom generally suffer from poor linearity performance, poor noise performance, etc. However, with the aggressive scaling of the supply voltage in Complementary Metal Oxide Semiconductor (CMOS) technology and the advent of System-On-Chip (SOC) technologies, it is inevitable that these circuits are to be operated with low voltage supply headroom. In this thesis, three low-voltage Integrated Circuits (IC) for Radio Frequency (RF) communication systems are presented. They are all designed and fabricated with 0.13um CMOS technology. Their experimental verifications are performed on die with Coplanar Waveguide (CPW) probes.;The second circuit is a low-voltage low-noise wideband down-conversion mixing frontend that consists of a Low-Noise Amplifier (LNA) and a passive mixer. The linearity analysis for the LNA, which is used as a transconductor, is analyzed using Volterra series. Through this analysis, the trade-off between noise cancellation and distortion cancellation is discussed. A simple distortion cancellation scheme that decouples the design guidelines from this trade-off is proposed. From 300 MHz to 1.2 GHz, the circuit achieves a conversion gain of 8.8 dB and a maximum IIP3 of -0.8 dBm, while having less than 4.8 dB noise figure. The overall circuit consumes 24.0 mW of power with the supply voltage of 0.9 V.;The third circuit is a low-voltage low-noise wideband active balun. The linearity analysis for the active balun circuit is also analyzed using Volterra series. The design consideration involving noise cancellation and distortion cancellation is discussed through this analysis. A simple distortion cancellation scheme that aims at improving the linearity performance of the circuit with low-voltage supply constraint is proposed. From 300 MHz to 2.4 GHz, the circuit achieves an average voltage gain of 15.5 dB and a maximum IIP 3 of -1.7 dBm, while having less than 4.0 dB noise figure from 500 MHz to 3.0 GHz. The overall circuit consumes 15.8 mW of power with the supply voltage of 0.9 V.;The first circuit is an ultra-low-voltage low-power single-balanced x2 subharmonic down-conversion mixer. A linearity analysis for the inductive source degenerated transconductor of the mixer is provided using Volterra series. This analysis provides a guideline for designing the inductive source degenerated transconductor with high linearity at the RF frequency of 8.6 GHz. The circuit achieves a conversion gain of 6.0 dB and an IIP 3 of -8.0 dBm at the RF frequency of 8.6 GHz while consuming 0.6 mW of DC power with the supply voltage of 0.6 V.
机译:在低压电源裕量下工作的模拟电路通常会遇到线性性能差,噪声性能差等问题。但是,随着互补金属氧化物半导体(CMOS)技术中电源电压的迅速缩放和片上系统的出现, (SOC)技术,这些电路不可避免地要在低压电源裕量下运行。本文提出了三种用于射频(RF)通信系统的低压集成电路(IC)。它们均采用0.13um CMOS技术进行设计和制造。他们的实验验证是使用共面波导(CPW)探头在裸片上进行的。第二个电路是低压低噪声宽带下变频混频前端,该前端由低噪声放大器(LNA)和无源混频器组成。使用Volterra系列分析用作跨导体的LNA的线性分析。通过该分析,讨论了噪声消除和失真消除之间的权衡。提出了一种简单的失真消除方案,该方案将设计准则与这种权衡脱钩。在300 MHz至1.2 GHz范围内,该电路可实现8.8 dB的转换增益和-0.8 dBm的最大IIP3,而噪声系数小于4.8 dB。整个电路在0.9 V的电源电压下消耗24.0 mW的功率;第三个电路是低压低噪声宽带有源巴伦。有源巴伦电路的线性分析也使用Volterra级数进行了分析。通过此分析讨论了涉及噪声消除和失真消除的设计注意事项。提出了一种简单的失真消除方案,旨在改善具有低压电源约束的电路的线性性能。从300 MHz到2.4 GHz,该电路的平均电压增益为15.5 dB,最大IIP 3为-1.7 dBm,而从500 MHz到3.0 GHz的噪声系数小于4.0 dB。整个电路在0.9 V的电源电压下消耗了15.8 mW的功率;第一个电路是超低压低功率单平衡x2次谐波下变频混频器。使用Volterra系列对混频器的电感源退化跨导进行线性分析。该分析为在8.6 GHz射频频率下设计具有高线性度的电感源退化跨导提供了指导。该电路在8.6 GHz的RF频率下实现6.0 dB的转换增益和-8.0 dBm的IIP 3,同时在0.6 V的电源电压下消耗0.6 mW的DC电源。

著录项

  • 作者

    He, Shan.;

  • 作者单位

    Queen's University (Canada).;

  • 授予单位 Queen's University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Master
  • 年度 2011
  • 页码 158 p.
  • 总页数 158
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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