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首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >Dual-threshold voltage assignment with transistor sizing for lowpower CMOS circuits
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Dual-threshold voltage assignment with transistor sizing for lowpower CMOS circuits

机译:低功耗CMOS电路的双阈值电压分配和晶体管尺寸

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摘要

We demonstrate a novel algorithm for assigning the thresholdnvoltage to the gates in a digital random logic complementarynmetal-oxide-semiconductor (CMOS) circuit for a dual-threshold voltagenprocess. The tradeoff between static and dynamic power consumption hasnbeen explored. When used along with device sizing and supply voltagenreduction techniques for low power, the proposed algorithm can reducenthe total power dissipation of a circuit by as much as 50%
机译:我们演示了一种新颖的算法,用于为双阈值电压n过程的数字随机逻辑互补金属氧化物半导体(CMOS)电路中的门分配阈值电压。静态和动态功耗之间的折衷已经被探索。与低功耗的器件尺寸调整和电源降低技术一起使用时,该算法可将电路的总功耗降低多达50%

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