Leakage-suppressed clock-gating circuit with Zigzag Super Cut-off CMOS (ZSCCMOS) for leakage-dominant sub-70-nm and sub-1-V-V/sub DD/ LSIs

摘要

As a candidate for the clock-gating scheme, Zigzag Super Cut-off CMOS (ZSCCMOS) has been proposed to reduce not only the switching power but also the leakage power. Due to its fast wakeup nature, the ZSCCMOS can be best suited to the clock-gating scheme. The wakeup time of the ZSCCMOS is estimated to be 12 times faster than the conventional Super Cut-off CMOS (SCCMOS) in 70-nm process technology. From the measurement of wakeup time in 0.6-/spl mu/m technology, it is observed to be eight times faster than the conventional scheme. Layout area, power, and delay overhead of the ZSCCMOS are discussed and analyzed in this paper.