Managing Subthreshold Leakage in Charge-Based Analog Circuits With Low-V{sub}(TH) Transistors by Analog T- Switch (AT-Switch) and Super Cut-off CMOS (SCCMOS)

摘要

The analog T-switch (AT-switch) scheme is introduced to suppress subthreshold-leakage problems in charge-based analog circuits such as switched capacitors and sample-and-hold circuits. A 0.5-V sigma-delta modulator is manufactured in a 0.15-μm FD-SOI process with low V{sub}(TH) of 0.1 V using the concept. The scheme is compared with another leakage-suppression scheme based on super cut-off CMOS (SCCMOS) and the conventional circuit which are also fabricated. The sigma-delta modulator based on AT-switch greatly improves 8.1-dB SNDR through reducing nonlinear leakage effects while the modulator based on SCCMOS improves the dynamic range rather than the SNDR by comparing with the conventional sigma-delta modulator.