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Annealing effect on phase transition and thermochromic properties of VO_2 thin films

机译:退火对VO_2薄膜的相变和热致变色性能的影响

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Vanadium dioxide (VO_2) is one kind of desired thermochromic material for many smart devices because of its notable temperature-responsive infrared modulation and metal-insulator transition with underlying structural phase transition (SPT). Understanding on the tuning of these properties in an anticipated manner is essential to accomplish device realization. Here, we report the annealing time induced modifications in SPT and the thermochromic properties of VO_2 thin films. Using RF sputtering deposition, VO_2 thin films were grown at room temperature and their ex-situ annealing was carried out at 600 ℃ for different time from 2 min to 60 min. Structural, electronic and thermochromic properties of these films were investigated. VO_2 thin films samples annealed for longer time exhibit larger crystallite size, higher surface roughness and SPT temperature, and the reduced hysteresis width of SPT during heating and cooling cycle. X-ray absorption spectroscopy results indicate that the variation in the annealing time do not alter the electronic structure significantly. Nevertheless, VO_2 thin film samples with prolonged annealing display higher IR transmittance modulation across the SPT.
机译:二氧化钒(VO_2)是许多智能设备所需的一种热变色材料,因为其显着的温度响应红外调制和具有基础结构相变(SPT)的金属-绝缘体转变。了解以预期的方式调整这些属性对于完成设备的实现至关重要。在这里,我们报告了退火时间引起的SPT修饰和VO_2薄膜的热致变色特性。利用RF溅射沉积法,在室温下生长VO_2薄膜,并在600℃下2分钟至60分钟的不同时间进行异位退火。研究了这些膜的结构,电子和热致变色性能。退火时间较长的VO_2薄膜样品具有较大的微晶尺寸,较高的表面粗糙度和SPT温度,并且在加热和冷却循环中SPT的磁滞宽度减小。 X射线吸收光谱结果表明,退火时间的变化不会明显改变电子结构。尽管如此,具有长时间退火的VO_2薄膜样品在整个SPT上显示出更高的红外透射率调制。

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