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Structural phase control and thermochromic modulation of VO_2 thin films by post thermal annealing

机译:后热退火后VO_2薄膜的结构相控制和热致变色调节

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Monoclinic M1 to rutile structural phase transition (SPT) in thermochromic VO2 is accompanied by the insulator to metal transition and transition from an infrared (IR) transparent to IR opaque phase. Fine control over the phase stabilization and the functional properties without additional doping can offer the ability to tailor VO2 thin films for their respective applications. In this work, post deposition thermal annealing was used to control the phase stabilization and the modulation in thermochromic performance of polycrystalline VO2 thin films. Monoclinic M1 to rutile SPT in VO2 thin films was tracked by in-situ temperature dependent synchrotron X-ray diffraction measurements and an increase in the SPT temperature was observed with increasing annealing temperature. Intermediate monoclinic M2 phase emerges near the SPT temperature at higher annealing temperature. Temperature dependent X-ray absorption spectroscopy (XAS) measurements revealed the higher electron correlation effect among the V 3d parallel to states across the phase transition in VO2 thin film having the intermediate phase. Spectral weight of V 3d(parallel to) states was found to increase with the annealing temperature. Lower annealing temperature drives the IR switching temperature towards room temperature while the higher annealing temperature improves the IR switching performance of VO2 thin films.
机译:热致变色VO2中的单斜晶M1至金红石结构相转变(SPT)伴随着绝缘体到金属转变,并从红外(IR)透明到IR不透明相的过渡。对相稳定化的微量控制和无额外掺杂的功能性能可以为其各自应用定制VO2薄膜的能力。在这项工作中,沉积后热退火用于控制相稳定化和多晶VO2薄膜热致变色性能的调节。通过原位温度依赖性同步旋流X射线衍射测量跟踪VO2薄膜中的单斜晶M1至金红石SPT,并观察到随着退火温度的增加,观察到SPT温度的增加。中间单斜晶M2相位在较高的退火温度下出现在SPT温度附近。温度依赖性X射线吸收光谱(XAS)测量揭示了与具有中间相的VO2薄膜中相位过渡的v 3D之间的较高的电子相关效果。发现V 3D(平行于)状态的光谱重量随着退火温度而增加。下退火温度驱动IR开关温度升温,同时较高的退火温度提高了VO2薄膜的IR开关性能。

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