机译:后热退火后VO_2薄膜的结构相控制和热致变色调节
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
Korea Inst Sci & Technol KIST Adv Anal Ctr Seoul 02792 South Korea;
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
POSTECH Pohang Accelerator Lab Pohang 37673 South Korea;
VO2; Thin film; Synchrotron XRD; Thermochromic; Phase transition modulation;
机译:大功率脉冲磁控溅射制备热致变色VO_2薄膜的低热预算退火
机译:大功率脉冲磁控溅射制备热致变色VO_2薄膜的低热预算退火
机译:退火对VO_2薄膜的相变和热致变色性能的影响
机译:热致变色的VO_2薄膜通过后退火处理v_2O_5薄膜制备
机译:原位热退火工艺对脉冲激光沉积制造CDS Cdte薄膜太阳能电池结构,光学和电性能的影响
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:V2O5薄膜后退火处理制备的热致变色VO2薄膜
机译:通过微结构调制(pOsTpRINT)控制YBa2Cu3O7-x薄膜中BaZrO3纳米棒的排列