METHOD FOR CONTROLLING CRYSTAL ORIENTATION PROPERTY OF FERROELECTRIC THIN FILM USING RAPID THERMAL ANNEALING

摘要

PURPOSE: ferroelectric thin film control method using rapid thermal annealing provide preparation pzt thin film include excellent residual polarization property, as a result, quick productivity and so that crystallization, even if execute thermal annealing it is short. ;CONSTITUTION: a kind of PZT precursor solutions are applied to substrate (102). Thermal decomposition is carried out by being baked. The execution is baked at 250 to 350 degrees Celsius. Rapid thermal annealing is carried out by carrying out crystallization, 25 to 30 degrees Celsius of use of temperature rise speed is (104) per second. The carry out rapid thermal annealing, in 550 to 650 degrees Celsius of annealing temperature. ;The 2012 of copyright KIPO submissions