A Ultra-Wideband Amplitude Modulation (AM) Detector Using Schottky Barrier Diodes Fabricated in Foundry CMOS Technology

摘要

Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low-noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The input and output matching of the detector is better than $-$10 dB from 0–10.3 GHz and 0–1.7 GHz, respectively, and almost covers the entire UWB frequency band (3.1–10.6 GHz). The measured peak conversion gain is $-$2.2 dB. The sensitivity over the band for amplitude modulation with the minimum ${rm E}_{rm b}/{rm N}_{rm o}$ of 6 dB is between $-$53 and $-$56 dBm. The power consumption is only 8.5 mW.