METHOD OF FABRICATING SCHOTTKY BARRIER DIODES AND SCHOTTKY BARRIER DIODE CLAMPED TRANSISTORS

摘要

The Schottky diode is formed with an intrinsic polysilicon layer that separates the metal silicide layer from the active region in the form of n conductivity. This structure eliminates the need for a process step of opening a window in the intrinsic polysilicon layer as compared to prior devices and reduces the surface area needed to form a Schottky diode. The Schottky diode can be formed as part of the overall process for forming an integrated circuit and can be placed in parallel across the collector / base junction of the bipolar transistor to form a Schottky barrier diode clamped transistor.