Low Capacitance E-Beam Fabricated Beam Lead Schottky Barrier Diodes. Final Technical Report March 1981 - January 1985

摘要

This is the final report in the series describing the work performed under contract No. DAJA37-81-C-0261, the object of which is to develop a process capable of fabricating low-parasitic high performance beam diodes. The diode chips use a unique physical structure which maximises overall strength and minimises the structural capacitance. In this report we present the full process which has been developed and we describe the evaluation devices which have been produced.