Schottky Barrier Diodes for Millimeter Wave Detection in a Foundry CMOS Process

摘要

CoSi{sub}2 -Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The n- and p-type diodes with an area of 16×0.32×0.32 μm{sup}2 achieve cutoff frequencies of ～ 1.5 and ～ 1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.