Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
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机译：毫米波SiGe BiCMOS应用的肖特基势垒二极管
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摘要
A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (Fc) above about 1.0 THz may include an anode having an anode area which provides a cutoff frequency (FC) above about 1.0 THz, an n-epitaxial layer having a thickness which provides a cutoff frequency (FC) above about 1.0 THz, a p-type guardring at an energy and dosage which provides a cutoff frequency (FC) above about 1.0 THz, the p-type guardring having a dimension which provides a cutoff frequency (FC) above about 1.0 THz, and a well tailor with an n-type dopant which provides a cutoff frequency (FC) above about 1.0 THz.
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机译：在SiGe BiCMOS晶片上形成肖特基势垒二极管的方法，包括形成提供约1.0 THz以上截止频率（F c ）的结构。在实施例中，提供高于约1.0THz的截止频率（F c ）的结构可以包括具有阳极区域的阳极，该阳极面积提供高于1.0THz的截止频率（F C ）。大约1.0 THz的n型外延层，其厚度可提供高于大约1.0 THz的截止频率（F C ），p型防护，其能量和剂量可提供截止频率（F大于约1.0 THz的 C ），p型保护环的尺寸可提供大于约1.0 THz的截止频率（F C ），以及一个剪裁好的n型掺杂剂，其截止频率（F C ）高于约1.0 THz。
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