Third-Order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology

摘要

This letter presents a comprehensive theoretical and experimental study of the third-order intermodulation (IM3) in a microelectromechanical system capacitive power sensor with clamped-clamped beam at -band. A simple model is developed to analyze the origin of IM3. High linearity of the sensor is demonstrated by dual-tone signal measurements both in frequency interval () dependence and input power dependence. The worst IM3 product for different remains less than −39 dBm at an input of dBm. Third-order intercept points of 29.3 dBm at Hz and 33.2 dBm at kHz are derived by measurements.