基于CMOS－MEMS工艺的小量程电容式压力传感器设计

摘要

小量程压力传感器研制的主要目的是解决低压环境下的压力测量问题。结合CMOS－MEMS技术，提出了一种小量程电容式压力传感器设计方案。利用ANSYS软件分析了传感器压敏结构的静力学性能和动力学性能，验证了理论设计的可行性。传感器可动上极板厚度仅为3μm，提高了小量程压力测量时的灵敏度，可以测量1～50 kPa范围内的压力。研究了制备工程中的关键工艺，介绍了传感器芯片的加工流程。所设计的传感器制作简单，成本低廉，易于单片集成，拓展了MEMS压力传感器的小量程应用领域。%The main purpose of developing low pressure sensors was solving pressure measurement problems at low -pressure environment .Combined CMOS-MEMS technology , a low pressure capacitive sensor was presented in this paper .In order to verify the feasibility of theoretical design , ANSYS software was conducted to analyze static and dynamic characteristics of pressure -sensing structure.The thickness of flexible plate was only 3μm so that the sensitivity of the sensor for low pressure range was increased and it can measure pressure from 1 kPa to 50 kPa.Key processes and manufacture flow were studied and introduced .The benefits of the proposed sensor through this technology are easy fabrication , low cost and monolithic integration , extending the application of MEMS pressure sensors .