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A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process

机译:基于硅晶片蚀刻工艺的MEMS微克电容式加速度计

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摘要

This paper presents a micromachined micro-g capacitive accelerometer with a silicon-based spring-mass sensing element. The displacement changes of the proof mass are sensed by an area-variation-based capacitive displacement transducer that is formed by the matching electrodes on both the movable proof mass die and the glass cover plate through the flip-chip packaging. In order to implement a high-performance accelerometer, several technologies are applied: the through-silicon-wafer-etching process is used to increase the weight of proof mass for lower thermal noise, connection beams are used to reduce the cross-sensitivity, and the periodic array area-variation capacitive displacement transducer is applied to increase the displacement-to-capacitance gain. The accelerometer prototype is fabricated and characterized, demonstrating a scale factor of 510 mV/g, a noise floor of 2 µg/Hz1/2 at 100 Hz, and a bias instability of 4 µg at an averaging time of 1 s. Experimental results suggest that the proposed MEMS capacitive accelerometer is promising to be used for inertial navigation, structural health monitoring, and tilt measurement applications.
机译:本文提出了一种具有硅基弹簧质量感测元件的微加工微g电容式加速度传感器。通过基于面积变化的电容式位移传感器感测质量块的位移变化,该电容式位移传感器由可动质量块模具和玻璃盖板上的匹配电极通过倒装芯片封装形成。为了实现高性能的加速度计,应用了多种技术:通过硅晶圆蚀刻工艺来增加质量证明的重量以降低热噪声,使用连接梁来降低交叉灵敏度,以及应用周期阵列面积变化电容位移传感器来增加位移电容增益。加速度计原型的制造和特性表明,其比例因子为510 mV / g,在100 Hz时的本底噪声为2 µg / Hz 1/2 ,平均时的偏置不稳定性为4 µg时间为1 s。实验结果表明,拟议的MEMS电容式加速度计有望用于惯性导航,结构健康监测和倾斜测量应用。

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