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Ethanol sensors based on ZnO nanotubes with controllable wall thickness via atomic layer deposition, an O_2 plasma process and an annealing process

机译:基于通过原子层沉积,O_2等离子体工艺和退火工艺可控制壁厚的ZnO纳米管的乙醇传感器

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摘要

ZnO nanotubes with a wall thickness on the order of nanometers were produced by utilizing an organic template and atomic layer deposition (ALD). The organic template was removed by an O_2 plasma process and a thermal annealing process, with the wall structure of the ZnO nanotubes maintained during the removal of the template. We investigated the response of a ZnO nanotube to ethanol gas as a function of its wall thicknesses. The ZnO nanotubes with a wall thicknesses of 10 nm showed the highest gas response (defined as the ratio of electrical resistances, R_(air)/R_(gas), under air atmosphere to the mixed air atmosphere with ethanol vapor) of 1184 toward 100 ppm at 450 ℃. The ZnO nanotube with a wall thickness of 10 nm was wholly depleted and thus highly responds to the adsorption of chemical species on its surface. Accurate control of the wall thickness of the ZnO nanotubes is crucial to make ZnO nanotube sensors with high response.
机译:通过使用有机模板和原子层沉积(ALD)来生产壁厚约为纳米的ZnO纳米管。通过O_2等离子体工艺和热退火工艺去除有机模板,并且在模板去除期间保持ZnO纳米管的壁结构。我们研究了ZnO纳米管对乙醇气体的响应,该响应是其壁厚的函数。壁厚为10 nm的ZnO纳米管显示出最高的气体响应(在空气气氛下与乙醇蒸汽混合空气下的电阻R_(空气)/ R_(气体)之比)为1184至100 ppm在450℃。壁厚为10 nm的ZnO纳米管被完全耗尽,因此对化学物质在其表面上的吸附高度敏感。 ZnO纳米管壁厚的精确控制对于使ZnO纳米管传感器具有高响应性至关重要。

著录项

  • 来源
    《Sensors and Actuators》 |2012年第1期|p.300-306|共7页
  • 作者单位

    Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;

    School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;

    School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;

    Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;

    School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;

    School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;

    Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    atomic layer deposition; electrospinning; ZnO; nanotube; sensing device; O_2 plasma;

    机译:原子层沉积;电纺;氧化锌;纳米管传感装置O_2等离子体;

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