机译:基于通过原子层沉积,O_2等离子体工艺和退火工艺可控制壁厚的ZnO纳米管的乙醇传感器
Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;
School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;
School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;
Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;
School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;
School of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Republic of Korea;
Molecular Electronics & Nanostructures Lab. School of Chemistry, NS60 Seoul National University, Seoul 151-747, Republic of Korea;
atomic layer deposition; electrospinning; ZnO; nanotube; sensing device; O_2 plasma;
机译:通过脉冲激光沉积装饰厚度控制的ZnO层的单壁碳纳米管的紫外光响应特性
机译:原子层沉积和壁厚的超精确控制形成TiO_2和ZrO_2纳米管
机译:临界原子级处理技术:远程等离子体增强原子层沉积和原子层蚀刻
机译:在最佳工艺温度和O_2后沉积退火条件下通过原子层沉积形成的低漏电流Al_2O_3金属-绝缘体-金属电容器
机译:多尺度计算流体动力学模型热和等离子体原子层沉积:腔室设计和过程控制的应用
机译:多壁碳纳米管上ZnO的原子层沉积及其在CNT-ZnO异质结构合成中的应用
机译:从前体化学到气体传感器:来自氧化锌层的等离子体增强的原子层沉积工艺,用于阻气和传感器应用的非渗透锌前体
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。