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Influence of annealing on physical properties of evaporated SnS films

机译:退火对汽化SnS薄膜物理性能的影响

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The effect of annealing on the composition, crystal structure, surface features and electro-optical properties of tin mono-sulfide (SnS) films, deposited by thermal evaporation at 300℃, has been studied. Elemental analysis of the films shows sulfur deficiency, which increases at higher annealing temperatures (T_a). The SnS structure in the as-deposited and annealed films remains orthorhombic. With an increase in T_a, the grain size and the surface roughness are reduced. The electrical resistivity also decreases with increasing T_a. The variation of activation energy and optical parameters with T_a has been explained by taking into account the degree of preferred orientation of the grains. The films annealed at 100℃ show some unusual features compared to those annealed at other temperatures.
机译:研究了退火对300℃热蒸发沉积的单硫化锡(SnS)薄膜的组成,晶体结构,表面特征和电光性能的影响。薄膜的元素分析显示硫缺乏,在较高的退火温度(T_a)下会增加。沉积和退火后的薄膜中的SnS结构保持正交。随着T_a的增加,晶粒尺寸和表面粗糙度减小。电阻率也随着T_a的增加而降低。通过考虑晶粒的优选取向程度,已经解释了活化能和光学参数随T_a的变化。与在其他温度下退火的薄膜相比,在100℃下退火的薄膜表现出一些不同寻常的特征。

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