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Study of annealing effects on the physical properties of evaporated SnS thin films for photovoltaic applications

机译:研究退火对用于光伏应用的蒸发SnS薄膜的物理性能的影响

摘要

Tin Sulphide (SnS) thin films have been deposited on glass slides by thermal evaporation using SnS powder. The improvements in the structural and optical properties of SnS thin films on annealing at different temperatures (200 degrees C, 300 degrees C, 400 degrees C, and 500 degrees C) in vacuum for one hour are presented in this work. The thin films annealed at 500 degrees C were decomposed, which limits the annealing temperature below than 500 degrees C. X-ray diffraction characterization showed an intensive peak at 31.8 degrees originating from (111) reflection. Ellipsometry measurements were done for optical studies and optical absorption coefficient for as-deposited films was 2.02 x 10(4) increased to 4.90 x 10(4) (cm)(-1) for films annealed to 300 degrees C for incident photon energies 1.55eV, and direct band gap of 1.90 eV was indicated.
机译:硫化锡(SnS)薄膜已通过使用SnS粉末的热蒸发沉积在载玻片上。这项工作提出了在不同温度(200摄氏度,300摄氏度,400摄氏度和500摄氏度)的真空下退火一小时后SnS薄膜的结构和光学性能的改进。在500摄氏度退火的薄膜被分解,从而将退火温度限制在500摄氏度以下。X射线衍射表征显示在31.8摄氏度出现了一个强烈的峰,该峰源自(111)反射。进行了椭偏测量以进行光学研究,沉积的薄膜的光吸收系数从2.02 x 10(4)增加到退火到300摄氏度的入射光子能量1.55的薄膜的4.90 x 10(4)(cm)(-1) eV,直接带隙为1.90 eV。

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