氧气气氛下退火温度对BST薄膜结构及物理性能的影响

摘要

利用溶胶凝胶法在Pt/TiO2/SiO2/Si (001)衬底上制备了(～70 nm)的Ba0.6Sr0.4TiO3 (BST)薄膜,采用磁控溅射法构建了Pt/BST/Pt/TiO2/SiO2/Si (001)电容器,研究了在氧气气氛中不同退火温度对BST薄膜结构及物理性能的影响.结果发现,650℃退火样品具有良好的结晶质量和介电性能.650℃退火样品在电场强度为200 kV/cm时漏电流密度为3.06×10-6 A/cm2.%Ba0.6Sr0.4TiO3(BST) thin films , 70 nm thick , were deposited on Pt/Ti/SiO2/Si(001) substrates by sol-gel method , and Pt/BST/Pt/TiOz/SiO2/Si (001) capacitors were fabricated using magnetron sputtering technique . The influence of annealing temperature in flowing oxygen on the microstructure and physical properties of BST thin films were investigated . It is found that BST films have better crystalline quality and physical properties after annealed at 650 ℃, and the leakage current density of Pt/BST/ Pt/TiO2/SiO2 Si (001) capacitors is 3. 06×10-6 A/cm2 at 200 kV/cm.