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Effect of annealing varied temperature on electrical and optical properties of indium tin oxide films at oxygen atmosphere

机译:退火温度变化对氧气氛下铟锡氧化物薄膜电学和光学性能的影响

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Indium tin oxide (ITO) films were deposited on non-heated glass slide which prepared by RF sputtering system at room temperature. The temperatures of annealing were varied at 200, 300, 400 and 500 Celsius, respectively. Effect of oxygen flow on properties of ITO films has been studied. The optical properties were characterized by UV-Vis spectrophotometer. Electrical properties were characterized by 4-point probe. The results show that transmittance and sheet resistance could be improved by heat treatment. We could get the minimum sheet resistance of 120 Omega/square and over 85% of the average transmittance in visible light.
机译:氧化铟锡(ITO)膜沉积在室温下通过RF溅射系统制备的未加热载玻片上。退火温度分别在200、300、400和500摄氏度之间变化。研究了氧气流量对ITO薄膜性能的影响。通过UV-Vis分光光度计表征光学性质。用四点探针表征电性能。结果表明,通过热处理可以改善透射率和薄层电阻。我们可以获得的最小薄层电阻为120Ω/平方,并且在可见光下的平均透射率超过85%。

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