退火条件对Sn掺杂ZnO薄膜光电性能的影响

摘要

采用溶胶-凝胶法在普通载玻片上制备Sn掺杂ZnO薄膜(SZO薄膜).研究空气退火、低真空退火、高真空退火、氮气退火、三高退火、循环退火6种不同退火条件对SZO薄膜光电性能的影响.结果表明:6种不同的退火条件制备的SZO薄膜均为纤锌矿结构且具有c轴择优取向生长的特性.高真空退火下,SZO薄膜的结晶状况和电学性质最优,最低电阻率可达到5.4×10-2Ω·cm.薄膜的可见光区平均透过率均大于85％.薄膜在390nm和440nm附近(325nm光激发下)都出现光致发光峰,在空气、氮气、低真空中退火后薄膜440nm处发光强度最为显著.%Sn doped ZnO thin films(SZO) was prepared on glasses by sol-gel method.The influence of six kinds of annealing conditions,including air annealing,low vacuum annealing,high vacuum annealing,N2 annealing,triple high vacuum annealing,cycle annealing on the crystal structure,optical and electrical properties of the SZO film was studied.The results show that all the SZO samples show preferential orientation along the c-axis.The SZO thin films has the optimum crystal structure and electrical property on the high vacuum annealing conditions.The minimum resistivity of the film is 5.4× 10-2Ω · cm.The average visible transmittance of SZO thin film is above 85％.The photoluminescence peaks at 390nm and 440nm is observed in all the samples (the excitation wavelength is set at 325nm).The intensity of the peak at 440nm is enhanced significantly on air annealing,N2 annealing and low vacuum annealing.