METHOD FOR FORMING A THIN FILM AND LIGHT EMITTING DEVICE USING A ZnO THIN FILM IN WHICH AIN IS DOPED AS A TRANSPARENT ELECTRODE OF THE LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for forming a thin film and light emitting device are provided to form a ZnO thin film in which AIN is doped, thereby forming a ZnO thin film with superior membrane quality and electrical features.;CONSTITUTION: A substrate is loaded after a ZnO target in which AIN is doped is loaded in a sputtering deposition chamber. A ZnO thin film in which AIN is doped is formed by applying power to the target. A light emitting device includes an anode(510), a light emitting layer, and a cathode(530) which are successively formed on the set area on the substrate. The anode is formed by a ZnO thin film in which AlN is doped.;COPYRIGHT KIPO 2011