METHOD FOR FORMING A THIN FILM AND LIGHT EMITTING DEVICE CAPABLE OF FORMING A P TYPE ZnO THIN FILM IN WHICH AIN IS DOPED BY A SPUTTERING METHOD

摘要

PURPOSE: A method for forming a thin film and light emitting device are provided to use a ZnO thin film in which AIN is doped as a transparent electrode of a light emitting device, thereby increasing the light emitting efficiency and lifetime of the light emitting device.;CONSTITUTION: A light emitting device comprises an anode, a light emitting layer(520), and a cathode(530) which are successively formed on the set area of a substrate. The anode is formed by a ZnO thin film in which 0.5 to 1.8mol% of AIN is doped. A substrate manufactured by silicon is loaded after a ZnO target in which 0.5 to 1.8mol% of AIN is doped is loaded in a sputtering deposition chamber. The ZnO thin film is formed by applying power to the target.;COPYRIGHT KIPO 2011