Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes

摘要

This study examined the anode material properties of Ga-doped zinc oxide (GZO) thin films deposited by pulsed DC magnetron sputtering along with the device performance of organic light emitting diodes (OLEDs) using GZO as the anode. The structure and electrical properties of the deposited films were examined as a function of the substrate temperature. The electrical properties of the GZO film deposited at 200 ℃ showed the best properties, such as a low resistivity, high mobility and high work function of 5.3×10~(-1)Ω cm, 9.9 cm~2/Vs and 4.37 eV, respectively. The OLED characteristics with the GZO film deposited under the optimum conditions showed good brightness > 10,000 cd/m~2. These results suggest that GZO films can be used as the anode in OLEDs, and a lower deposition temperature of 200 ℃ is suitable for flexible devices.